Ultrahigh Responsivity and Detectivity Graphene–Perovskite Hybrid Phototransistors by Sequential Vapor Deposition
نویسندگان
چکیده
In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.
منابع مشابه
UV Photodetector Based on Graphene − ZnO Nanowire Hybrid : 1 Fabrication , Photoresponse and Photoluminescence Studies
Herein, we demonstrate a graphene based efficient UV photodetector by using vertically aligned ZnO 8 NWs on chemical vapor deposited graphene with and without a ZnO buffer layer. The effect of rapid 9 thermal annealing (RTA) on grapheneZnO thin film hybrid prior to the growth of ZnO NWs by physical 10 vapor deposition technique is investigated from the μRaman spectroscopy and high resolution ...
متن کاملGraphene-ruthenium complex hybrid photodetectors with ultrahigh photoresponsivity.
The maximum responsivity of a pure monolayer graphene-based photodetector is currently less than 10 mA W(-1) because of small optical absorption and short recombination lifetime. Here, a graphene hybrid photodetector functionalized with a photoactive ruthenium complex that shows an ultrahigh responsivity of ≈1 × 10(5) A W(-1) and a photoconductive gain of ≈3 × 10(6) under incident optical inten...
متن کاملQuasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications.
We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of...
متن کاملHigh-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite
Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible...
متن کاملPhototransistors development and their applications to Lidar
Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPEand MBE-grown phot...
متن کامل